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刘金龙，李成明，张营营，陈良贤, 黑立富，吕反修. 一种高导热集成电路用金刚石基片的制备方法。专利号：ZL201010578837.6。

刘金龙，李成明，陈良贤，化称意，郭建超，闫雄伯，黑立富，魏俊俊。一种金刚石膜表面选区扩散形成 P-N 结的制备方法。专利号：ZL201410738255.8。

刘金龙，李成明，陈良贤，郭建超，闫雄伯，魏俊俊，黑立富。一种 GaN/金刚石膜复合片的制备方法。专利号：ZL201410498719.2。

刘金龙，李成明，苗建印，李振宇，魏俊俊，陈良贤，黑立富，张建军，闫雄伯。一种超高定向导热碳基复合材料的制备方法。专利号：ZL201510406256.7。

刘金龙，李成明，林亮珍，郑宇亭，赵云，闫雄伯，陈良贤，魏俊俊，黑立富，张建军。基于低成本单晶金刚石制备高性能金刚石半导体的方法。专利号：ZL201710556211.7。

《金刚石膜制备与应用》科学出版社（978-7-03-041822-7） 2014.08