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刘金龙，李成明，陈良贤，化称意，郭建超，闫雄伯，黑立富，魏俊俊。一种金刚石膜表面选区扩散形成 P-N 结的制备方法。专利号：ZL201410738255.8。

Release time:2022-04-13 Hits:

Service Invention or Not:  no

Pre One:刘金龙，李成明，张营营，陈良贤, 黑立富，吕反修. 一种高导热集成电路用金刚石基片的制备方法。专利号：ZL201010578837.6。 Next One:刘金龙，李成明，陈良贤，郭建超，闫雄伯，魏俊俊，黑立富。一种 GaN/金刚石膜复合片的制备方法。专利号：ZL201410498719.2。

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