刘金龙，李成明，陈良贤，等. 高频大功率金刚石薄膜场效应管的研究进展. 无机材料学报，2010，25(9):897-905..

J.L. Liu, C.M. Li, L.X. Chen, et al. Preparation and characterization of diamond-TiC-Ti-Ag/Cu gradient metallization system. Materials Science Forum, 2011, 687: 722-728..

J.L. Liu, C.M. Li, R.H. Zhu, et al. Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD. International Journal of Minerals, Metallurgy and Materials, 2013, 20(8): 802-807..

S. Liu, J.L. Liu, C.M. Li, et al. The mechanical enhancement of vapor deposited diamond film by plasma low pressure/ high-temperature treatment. Carbon, 2013, 65: 365-370..

J.L. Liu, C.M. Li, L.X. Chen, et al. Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet CVD. Diamond and Related Materials, 2013, 32: 48-53..

J.L. Liu, C.M. Li, R.H. Zhu, et al. RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film. Applied Surface Science, 2013, 284: 798-803..

J.L. Liu, C.M. Li, J.C. Guo, et al. Effect of atomic hydrogen bombardment on the surface conductivity of polycrystalline diamond films. Applied Surface Science, 2013, 287: 304-310..

Chengming Li，Jinlong Liu*，et al. An amazing semiconductor choice for high-frequency FET: H-terminated polycrystalline diamond film prepared by DC arc jet CVD, Phys.Status. Solidi C, 2014, 11(11-12): 1692-1696..

田寒梅，刘金龙*，等。微波等离子体下 GaN 的分解与纳米金刚石膜的沉积。人工晶体学报, 2015,44(1): 7-12..

刘金龙，刘盛，郭建超，等。氢终止金刚石表面的形成机制。物理化学学报,2015,31(9),1741-1746..