北京科技大学主页平台管理系统张先坤--中文主页--论文成果

论文成果

中文主页 - 科学研究 - 论文成果

[1] H. Yu, Z. Cao, Z. Zhang, X. Zhang*, and Y. Zhang*. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, DOI: 10.1007/s12613-022-2426-3..
[2] Wenhui Tang#, X. Zhang#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, DOI: 10.1002/smtd.202101583.
[3] Y. Yu#, X. Zhang#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang*, and X. Wang*. Microscopic and quantitative characterization of defect in MoS2 monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721..
[4] B. Liu#, X. Zhang#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang*, and Y. Zhang*, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, DOI: 10.1002/inf2.12282..
[5] L. Gao#, Q. Liao#, X. Zhang#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang*, and Y. Zhang*. Defect-Engineered atomically thin MoS2 homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646..
[6] X. Zhang, L. Gao, H. Yu, Q. Liao, Z. Kang, Z. Zhang*, and Y. Zhang*. Single-atom vacancy doping in two-dimensional transition metal dichalcogenides. Accounts of Materials Research 2021, 2(8), 655-668..
[7] X. Zhang#, Q. Liao#, Z. Kang, B. Liu, Y. Ou, J. Du, J. Xiao, L. Gao, H. Shan, Y. Luo, Z. Fang, P. Wang, Z. Sun, Z. Zhang*, and Y. Zhang*. Self-healing originated van der Waals homojunctions with strong interlayer coupling for high-performance photodiodes. ACS Nano, 2019, 13, 3280-3291. (Supplementary Cover Article).
[8] X. Zhang#, Huihui Yu#, Wenhui Tang#, Xiaofu Wei, Li Gao, Mengyu Hong, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. All-van-der-Waals barrier-free contacts for high-mobility transistors. Advanced Materials. 2022, DOI:10.1002/adma.202109521..
[9] X. Zhang#, Z. Kang#, L. Gao#, B. Liu, H. Yu, Q. Liao, Z. Zhang*, Y. Zhang. Molecule-upgraded van der Waals contacts for Schottky-barrier-free electronics. Advanced Materials. 2021, 33(45), 2104935..
[10] X. Zhang#, Q. Liao#, Z. Kang#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang*, X. Duan*, and Y. Zhang*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051..

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论文成果

[1] H. Yu, Z. Cao, Z. Zhang, X. Zhang, and Y. Zhang. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, DOI: 10.1007/s12613-022-2426-3..

[2] Wenhui Tang#, X. Zhang#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang, and Yue Zhang. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, DOI: 10.1002/smtd.202101583.

[3] Y. Yu#, X. Zhang#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang, and X. Wang. Microscopic and quantitative characterization of defect in MoS2 monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721..

[4] B. Liu#, X. Zhang#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang, and Y. Zhang, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, DOI: 10.1002/inf2.12282..

[5] L. Gao#, Q. Liao#, X. Zhang#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang, and Y. Zhang. Defect-Engineered atomically thin MoS2 homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646..

[6] X. Zhang, L. Gao, H. Yu, Q. Liao, Z. Kang, Z. Zhang, and Y. Zhang. Single-atom vacancy doping in two-dimensional transition metal dichalcogenides. Accounts of Materials Research 2021, 2(8), 655-668..

[8] X. Zhang#, Huihui Yu#, Wenhui Tang#, Xiaofu Wei, Li Gao, Mengyu Hong, Qingliang Liao, Zhuo Kang, Zheng Zhang, and Yue Zhang. All-van-der-Waals barrier-free contacts for high-mobility transistors. Advanced Materials. 2022, DOI:10.1002/adma.202109521..

[9] X. Zhang#, Z. Kang#, L. Gao#, B. Liu, H. Yu, Q. Liao, Z. Zhang*, Y. Zhang. Molecule-upgraded van der Waals contacts for Schottky-barrier-free electronics. Advanced Materials. 2021, 33(45), 2104935..

[10] X. Zhang#, Q. Liao#, Z. Kang#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang, X. Duan, and Y. Zhang*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051..

论文成果

[1] H. Yu, Z. Cao, Z. Zhang, X. Zhang*, and Y. Zhang*. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, DOI: 10.1007/s12613-022-2426-3..

[2] Wenhui Tang#, X. Zhang#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, DOI: 10.1002/smtd.202101583.

[3] Y. Yu#, X. Zhang#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang*, and X. Wang*. Microscopic and quantitative characterization of defect in MoS2 monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721..

[4] B. Liu#, X. Zhang#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang*, and Y. Zhang*, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, DOI: 10.1002/inf2.12282..

[5] L. Gao#, Q. Liao#, X. Zhang#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang*, and Y. Zhang*. Defect-Engineered atomically thin MoS2 homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646..

[6] X. Zhang, L. Gao, H. Yu, Q. Liao, Z. Kang, Z. Zhang*, and Y. Zhang*. Single-atom vacancy doping in two-dimensional transition metal dichalcogenides. Accounts of Materials Research 2021, 2(8), 655-668..

[8] X. Zhang#, Huihui Yu#, Wenhui Tang#, Xiaofu Wei, Li Gao, Mengyu Hong, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. All-van-der-Waals barrier-free contacts for high-mobility transistors. Advanced Materials. 2022, DOI:10.1002/adma.202109521..

[9] X. Zhang#, Z. Kang#, L. Gao#, B. Liu, H. Yu, Q. Liao, Z. Zhang*, Y. Zhang. Molecule-upgraded van der Waals contacts for Schottky-barrier-free electronics. Advanced Materials. 2021, 33(45), 2104935..

[10] X. Zhang#, Q. Liao#, Z. Kang#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang*, X. Duan*, and Y. Zhang*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051..

[1] H. Yu, Z. Cao, Z. Zhang, X. Zhang, and Y. Zhang. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, DOI: 10.1007/s12613-022-2426-3..

[2] Wenhui Tang#, X. Zhang#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang, and Yue Zhang. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, DOI: 10.1002/smtd.202101583.

[3] Y. Yu#, X. Zhang#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang, and X. Wang. Microscopic and quantitative characterization of defect in MoS2 monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721..

[4] B. Liu#, X. Zhang#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang, and Y. Zhang, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, DOI: 10.1002/inf2.12282..

[5] L. Gao#, Q. Liao#, X. Zhang#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang, and Y. Zhang. Defect-Engineered atomically thin MoS2 homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646..

[6] X. Zhang, L. Gao, H. Yu, Q. Liao, Z. Kang, Z. Zhang, and Y. Zhang. Single-atom vacancy doping in two-dimensional transition metal dichalcogenides. Accounts of Materials Research 2021, 2(8), 655-668..

[8] X. Zhang#, Huihui Yu#, Wenhui Tang#, Xiaofu Wei, Li Gao, Mengyu Hong, Qingliang Liao, Zhuo Kang, Zheng Zhang, and Yue Zhang. All-van-der-Waals barrier-free contacts for high-mobility transistors. Advanced Materials. 2022, DOI:10.1002/adma.202109521..

[10] X. Zhang#, Q. Liao#, Z. Kang#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang, X. Duan, and Y. Zhang*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051..