北京科技大学主页平台管理系统张先坤--中文主页--科学研究

研究领域

1. 低维材料的可控合成与晶格结构设计;

2. 基于低维材料的新型半导体电子与光电器件；

3. 基于范德华异质结的高性能微电子器件与电路集成。

科研项目

范德华金属的可控掺杂与低功耗电子器件研究,完成,

论文成果

H. Yu, Z. Cao, Z. Zhang, X. Zhang*, and Y. Zhang*. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, DOI: 10.1007/s12613-022-2426-3..
Wenhui Tang#, X. Zhang#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, DOI: 10.1002/smtd.202101583.
Y. Yu#, X. Zhang#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang*, and X. Wang*. Microscopic and quantitative characterization of defect in MoS2 monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721..
B. Liu#, X. Zhang#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang*, and Y. Zhang*, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, DOI: 10.1002/inf2.12282..
L. Gao#, Q. Liao#, X. Zhang#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang*, and Y. Zhang*. Defect-Engineered atomically thin MoS2 homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646..

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科学研究

研究领域

科研项目

范德华金属的可控掺杂与低功耗电子器件研究,完成,

论文成果

H. Yu, Z. Cao, Z. Zhang, X. Zhang, and Y. Zhang. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, DOI: 10.1007/s12613-022-2426-3..

Wenhui Tang#, X. Zhang#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang, and Yue Zhang. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, DOI: 10.1002/smtd.202101583.

Y. Yu#, X. Zhang#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang, and X. Wang. Microscopic and quantitative characterization of defect in MoS2 monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721..

B. Liu#, X. Zhang#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang, and Y. Zhang, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, DOI: 10.1002/inf2.12282..

L. Gao#, Q. Liao#, X. Zhang#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang, and Y. Zhang. Defect-Engineered atomically thin MoS2 homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646..

专利软著

著作成果

科学研究

研究领域

科研项目

范德华金属的可控掺杂与低功耗电子器件研究,完成,

论文成果

H. Yu, Z. Cao, Z. Zhang, X. Zhang*, and Y. Zhang*. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, DOI: 10.1007/s12613-022-2426-3..

Wenhui Tang#, X. Zhang#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, DOI: 10.1002/smtd.202101583.

Y. Yu#, X. Zhang#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang*, and X. Wang*. Microscopic and quantitative characterization of defect in MoS2 monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721..

B. Liu#, X. Zhang#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang*, and Y. Zhang*, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, DOI: 10.1002/inf2.12282..

L. Gao#, Q. Liao#, X. Zhang#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang*, and Y. Zhang*. Defect-Engineered atomically thin MoS2 homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646..

专利软著

著作成果

H. Yu, Z. Cao, Z. Zhang, X. Zhang, and Y. Zhang. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, DOI: 10.1007/s12613-022-2426-3..

Wenhui Tang#, X. Zhang#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang, and Yue Zhang. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, DOI: 10.1002/smtd.202101583.

Y. Yu#, X. Zhang#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang, and X. Wang. Microscopic and quantitative characterization of defect in MoS2 monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721..

B. Liu#, X. Zhang#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang, and Y. Zhang, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, DOI: 10.1002/inf2.12282..

L. Gao#, Q. Liao#, X. Zhang#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang, and Y. Zhang. Defect-Engineered atomically thin MoS2 homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646..