X. Zhang#, Q. Liao#, Z. Kang#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang*, X. Duan*, and Y. Zhang*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051.
点击次数：
- 上一条：
- X. Zhang#, Z. Kang#, L. Gao#, B. Liu, H. Yu, Q. Liao, Z. Zhang*, Y. Zhang. Molecule-upgraded van der Waals contacts for Schottky-barrier-free electronics. Advanced Materials. 2021, 33(45), 2104935.
- 下一条：
- X. Zhang#, B. Liu#, L. Gao, H. Yu, X. Liu, J. Du, J. Xiao, Y. Liu, L. Gu, Q. Liao, Z. Kang, Z. Zhang*, and Y. Zhang*. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions. Nature Communications. 2021, 12, 1522.
