X. Zhang#, B. Liu#, L. Gao, H. Yu, X. Liu, J. Du, J. Xiao, Y. Liu, L. Gu, Q. Liao, Z. Kang, Z. Zhang*, and Y. Zhang*. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions. Nature Communications. 2021, 12, 1522.
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- X. Zhang#, Q. Liao#, Z. Kang#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang*, X. Duan*, and Y. Zhang*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051.
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- X. Zhang#, Q. Liao#, S. Liu#, Z. Kang, Z. Zhang*, J. Du, F. Li, S. Zhang, J. Xiao, B. Liu, Y. Ou, X. Liu, L. Gu, and Y. Zhang*, Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction