M. Z. Peng, et al. Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-rich AlGaN. Journal of Crystal Growth. 307, 289-293 (2007)..

M. Z. Peng, et al. Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices. Journal of Crystal Growth. 310, 1088-1092 (2008)..

M. Z. Peng, et al. Characteristics of silent B1H mode in AlxGa1-xN alloys observed by Raman scattering. Journal of Alloys and Compounds. 473, 473-476 (2009)..

M. Z. Peng, et al. Post-process thermal treatment for microwave power improvement of AlGaN/GaN HEMTs. Microelectronics Engineering. 87, 2638-2641 (2010)..

M. Z. Peng, et al. X-band AlGaN/GaN HEMTs with high microwave power performance. Sci China Phys Mech Astron, 54, 442-445 (2011)..

M. Z. Peng, et al. 14.2 W/mm internally-matched AlGaN/GaN HEMT for X-band applications. Solid State Electronics. 64，63-66 (2011)..

M. Z. Peng, et al. Effect of pinch-off current leakage characteristics on microwave power performances of AlxGa1-xN/GaN HEMTs. Solid State Electronics, 80, 1-4 (2013)..

C. H. Liu, M. Z. Peng, et al. Interface engineering on p-CuI/n-ZnO heterojunction for enhancing piezoelectric and piezo-phototronic performance. Nano Energy. 26, 417-424 (2016)..

X. Q. Shi+, M. Z. Peng+(co-first author), et al. A Flexible GaN Nanowire Array-Based Schottky-Type Visible Light Sensor with Strain-Enhanced Photoresponsivity. Adv. Electron. Mater. 1, 1500169 (2015)..

A. H. Zhang+, M. Z. Peng+(co-first author), et al. Piezoelectric and Deformation Potential Effects of Strain-Dependent Luminescence in Semiconductor Quantum Well Structures. Nano Research. 10, 134-144 (2017)..