Faculty

Allen Jian YANG, a Distinguished Professor at the University of Science and Technology Beijing, is a recipient of the national young talent program (overseas) and a Dingxin Scholar at the university.

His research primarily focuses on semiconductor micro/nano devices, reliability research, and integration technology. His work has been published as first or corresponding author in renowned journals such as Nature Electronics, Advanced Materials, and ACS Nano.

He serves as a Young Editorial Board Member for the Journal of Materiomics and a reviewer for high-impact journals including Nature Electronics, Nature Communications, and Matter.

Young talents are highly welcome to join the team to pursue Master's or Ph.D. degrees. Postdoctoral researchers are also encouraged to apply.

Email:
ajyang@ustb.edu.cn

Work Experience
Jun 2025 - Present
University of Science and Technology Beijing, China
Distinguished Professor

Jul 2022 - May 2025
Nanyang Technological University, Singapore
Senior Postdoctoral Research Fellow (Advisor: Xiao WANG)

Apr 2017 - Jun 2022
Nanyang Technological University, Singapore
Postdoctoral Research Fellow (Advisor: Xiao WANG)

Education
Aug 2012 - Feb 2017
Nanyang Technological University, Singapore
Ph.D. (Advisor: Hua ZHANG)

Sep 2008 - Jul 2012
Fudan University, China
Bachelor's Degree

Representative Publications
(* Corresponding author; # Equal contribution)

A. J. Yang^#*, L. Wu^#, Y. Liu, X. Zhang, K. Han, Y. Huang, S. Li, X. J. Loh, Q. Zhu, R. Su, C.-W. Nan*, X. Renshaw Wang*, Multifunctional magnetic oxide-MoS₂ heterostructures on silicon, Adv. Mater. 2302620 (2023)

A.J. Yang*, S. Wang, J. Xu, X. J. Loh, Q. Zhu, X. Renshaw Wang*, Two-dimensional layered materials meet perovskite oxides: a combination for high-performance electronic devices, ACS Nano 17, 9748-9762 (2023)

A. J. Yang*, K. Han, K. Huang, C. Ye, W. Wen, R. Zhu, R. Zhu, J. Xu, T. Yu, P. Gao, Q. Xiong, X. Renshaw Wang*, Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors. Nat. Electron. 5, 233-240 (2022)