Electronic and structural properties of ThO2/ThN interfaces: A First-principles study

Pre One:关键锕系和裂片元素与类石墨材料相互作用的机器学习模型与吸附机制解析

Next One:High Quantum-Efficiency in ACeSiX4 (A = K, Rb, Cs; X = S, Se) achieved through Coupling Interlayer and Intralayer Interactions