影响因子：8.7
DOI码：10.1002/smtd.202400179
所属单位：北京科技大学
发表刊物：Small Methods
刊物所在地：德国
摘要：Interface strain significantly affects the band structure and electronic states of metal-nanocrystal-2D-semiconductor heterostructures, impacting system performance. While transmission electron microscopy (TEM) is a powerful tool for studying interface strain, its accuracy may be compromised by sample overlap in high-resolution images due to the unique nature of the metal-nanocrystals-2D-semiconductors heterostructure.
合写作者：Z. T. Zhao, Y. Y. Xu, R. M. Wang
第一作者：Y. C. Zhu
论文类型：期刊论文
通讯作者：Rongming Wang
学科门类：工学
文献类型：J
卷号：8
期号：12
页面范围：2400179
ISSN号：2366-9608/2366-9608
是否译文：否
发表时间：2024-12-01
发布期刊链接：https://onlinelibrary.wiley.com/doi/10.1002/smtd.202400179