影响因子：4.7
DOI码：10.1021/acsaelm.4c01171
所属单位：北京科技大学
发表刊物：ACS Applied Electronic Materials
刊物所在地：美国
摘要：By utilizing the dipole interactions, polar heterostructures are developing toward two-dimensional/three-dimensional (2D/3D) hybrid dimensions for unique phenomena such as polarization-induced electric field, charge separation, band-structure modification, etc. In this study, we have constructed 2D/3D alpha-In2Se3/GaN polar heterostructures by stacking 2D alpha-In2Se3 and 3D wurtzite GaN semiconductors with distinct polarity configurations.
合写作者：F. Tian, P. P. Li, Y. Y. Xu, H. Y. Wei, X. H. Zheng, M. Z. Peng
第一作者：D. L. Kong
论文类型：期刊论文
通讯作者：Xinhe Zheng, Mingzeng Peng
学科门类：工学
文献类型：J
卷号：6
期号：9
页面范围：6747-6757
ISSN号：2637-6113/2637-6113
是否译文：否
发表时间：2024-09-24
发布期刊链接：https://pubs.acs.org/doi/10.1021/acsaelm.4c01171