影响因子：3.0
DOI码：10.1039/d3cp02137h
所属单位：北京科技大学
发表刊物：Physical Chemistry Chemical Physics
刊物所在地：英国
摘要：Beyond three-dimensional (3D) architectures, polar semiconductor heterostructures are developing in the direction of two-dimensional (2D) scale with mix-dimensional integration for novel properties and multifunctional applications. Herein, we stacked 2D Janus MoSSe and 3D wurtzite GaN polar semiconductors to construct MoSSe/GaN polar heterostructures by polarity configurations. The structural stability was enhanced as binding energy changed from -0.08 eV/-0.17 eV in the N polarity to -0.24 eV/-0.42 eV in the Ga polarity.
合写作者：F. Tian, Y. Y. Xu, S. Q. Zhu, Z. T. Yu, L. F. Xiong, P. P. Li, H. Y. Wei, X. H. Zheng, M. Z. Peng
第一作者：D. L. Kong
论文类型：期刊论文
通讯作者：Xinhe Zheng, Mingzeng Peng
学科门类：工学
文献类型：J
卷号：25
期号：44
页面范围：30361-30372
ISSN号：1463-9076/1463-9084
是否译文：否
发表时间：2023-01-01
发布期刊链接：https://pubs.rsc.org/cp/article/25/44/30361-30372/801505