Engineering Nonvolatile Polarization in 2D α-In2Se3/α-Ga2Se3 Ferroelectric Junctions

Date:2026-11-07 clicks:

Impact Factor:4.8

DOI number:10.3390/nano15030163

Affiliation of Author(s):北京科技大学

Journal:Nanomaterials

Place of Publication:瑞士

Abstract:The advent of two-dimensional (2D) ferroelectrics offers a new paradigm for device miniaturization and multifunctionality. Recently, 2D alpha-In2Se3 and related III-VI compound ferroelectrics manifest room-temperature ferroelectricity and exhibit reversible spontaneous polarization even at the monolayer limit.

Co-author:DL Kong, J Yang, SY Cui, Q Chen, Y Liu, ZH He, F Liu, YY Xu, HY Wei, XH Zheng, MZ Peng

First Author:PP Li

Indexed by:Journal paper

Correspondence Author:Xinhe Zheng, Mingzeng Peng

Discipline:Engineering

Document Type:J

Volume:15

Issue:3

Page Number:163

ISSN No.:2079-4991

Translation or Not:no

Date of Publication:2025-01-22

Links to published journals:https://www.mdpi.com/2079-4991/15/3/163

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