Manipulating Ferroelectric α-In₂Se₃/GaN Dipole Interactions by Polarization Engineering

Date:2026-11-07 clicks:

Impact Factor:4.7

DOI number:10.1021/acsaelm.4c01171

Affiliation of Author(s):北京科技大学

Journal:ACS Applied Electronic Materials

Place of Publication:美国

Abstract:By utilizing the dipole interactions, polar heterostructures are developing toward two-dimensional/three-dimensional (2D/3D) hybrid dimensions for unique phenomena such as polarization-induced electric field, charge separation, band-structure modification, etc. In this study, we have constructed 2D/3D alpha-In2Se3/GaN polar heterostructures by stacking 2D alpha-In2Se3 and 3D wurtzite GaN semiconductors with distinct polarity configurations.

Co-author:F. Tian, P. P. Li, Y. Y. Xu, H. Y. Wei, X. H. Zheng, M. Z. Peng

First Author:D. L. Kong

Indexed by:Journal paper

Correspondence Author:Xinhe Zheng, Mingzeng Peng

Discipline:Engineering

Document Type:J

Volume:6

Issue:9

Page Number:6747-6757

ISSN No.:2637-6113/2637-6113

Translation or Not:no

Date of Publication:2024-09-24

Links to published journals:https://pubs.acs.org/doi/10.1021/acsaelm.4c01171

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