Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures
Date:2026-11-07 clicks:
Impact Factor:3.0
DOI number:10.1039/d3cp02137h
Affiliation of Author(s):北京科技大学
Journal:Physical Chemistry Chemical Physics
Place of Publication:英国
Abstract:Beyond three-dimensional (3D) architectures, polar semiconductor heterostructures are developing in the direction of two-dimensional (2D) scale with mix-dimensional integration for novel properties and multifunctional applications. Herein, we stacked 2D Janus MoSSe and 3D wurtzite GaN polar semiconductors to construct MoSSe/GaN polar heterostructures by polarity configurations. The structural stability was enhanced as binding energy changed from -0.08 eV/-0.17 eV in the N polarity to -0.24 eV/-0.42 eV in the Ga polarity.
Co-author:F. Tian, Y. Y. Xu, S. Q. Zhu, Z. T. Yu, L. F. Xiong, P. P. Li, H. Y. Wei, X. H. Zheng, M. Z. Peng
First Author:D. L. Kong
Indexed by:Journal paper
Correspondence Author:Xinhe Zheng, Mingzeng Peng
Discipline:Engineering
Document Type:J
Volume:25
Issue:44
Page Number:30361-30372
ISSN No.:1463-9076/1463-9084
Translation or Not:no
Date of Publication:2023-01-01
Links to published journals:https://pubs.rsc.org/cp/article/25/44/30361-30372/801505