北京科技大学主页平台管理系统韩文妥--中文主页-- W.T. Han, H.P. Liu, B.S. Li, Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C, Applied Surface Science,Volume 455,2018,Pages 433-437.

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个人信息

韩文妥Hanwentuo

副教授

硕士生导师

毕业院校：北京科技大学

学科：材料物理与化学

学历：研究生

学位：博士

所在单位：材料科学与工程学院

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W.T. Han, H.P. Liu, B.S. Li, Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C, Applied Surface Science,Volume 455,2018,Pages 433-437.

发布时间：2022-04-07 点击次数：

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上一条：Han, Wentuo, and Bingsheng Li. "Microstructural defects in He-irradiated polycrystalline α-SiC at 1000° C." Journal of Nuclear Materials 504 (2018): 161-165.

下一条：Han, W.*, Wan, F., Yabuuchi, K., Serizawa, H., & Kimura, A. Joint inhomogeneity in dissimilar friction stir welded martensitic and nanostructured ferritic steels. Science and Technology of Welding and Joining, 23(8) (2018):659-665.