X. Q. Yan, X. M. Huang, S. Uda and M. W. Chen, Effect of heavy boron doping on pressure-induced phase transitions in single-crystal silicon, Applied Physics Letters, 87, 191911 (2005)
发布时间：2022-04-07 点击次数：
上一条：X. Q. Yan, W. Y. Zhou, L. F. Sun, Y. Gao, D. F. Liu, J. X. Wang, Z. P. Zhou, H. J. Yuan, L. Song, L. F. Liu, G. Wang, S. S. Xie, The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires, Journal of Physics and Chemistry of Solids, 66, 701 (2005)
下一条：X. Q. Yan, W. J. Li, T. Goto and M. W. Chen, Raman spectroscopy of pressure-induced amorphous boron carbide, Applied Physics Letters, 88, 131905 (2006)
