北京科技大学主页平台管理系统陈冷--中文主页-- Qixun Yin, Leng Chen*. Use of a Ti buffer layer to improve the mechanical properties of Ge2Sb2Te5 thin films for phase-change memory. JOM, 2020, doi 10.1007/s11837-020-04043-5

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中文主页 - 科学研究 - 论文成果

Qixun Yin, Leng Chen*. Use of a Ti buffer layer to improve the mechanical properties of Ge2Sb2Te5 thin films for phase-change memory. JOM, 2020, doi 10.1007/s11837-020-04043-5

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上一条：: Qixun Yin, Leng Chen*. Improved mechanical and electrical properties of phase change memory Ga-Sb thin films. Journal of Nanoscience and Nanotechnology, 2020,20:213-221

下一条：: Qixun Yin, Leng Chen*. Crystallization behavior and electrical characteristics of Ga-Sb thin films for phase change memory. Nanotechnology, 2020, doi 10.1088/1361-6528/ab7429