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Qixun Yin, Leng Chen*. Crystallization behavior and electrical characteristics of Ga-Sb thin films for phase change memory. Nanotechnology, 2020, doi 10.1088/1361-6528/ab7429

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Pre One:Qixun Yin, Leng Chen*. Use of a Ti buffer layer to improve the mechanical properties of Ge2Sb2Te5 thin films for phase-change memory. JOM, 2020, doi 10.1007/s11837-020-04043-5

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